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Electromigration in structures of aluminium on semi-insulating GaAsEJIMANYA, J. I.Thin solid films. 1986, Vol 144, Num 2, pp 151-158, issn 0040-6090Article

Diffusion d'atomes stimulée par irradiation en un contact métal-semiconducteurSINISHCHUK, I. K; CHAJKA, G. E; PISHIYANU, F. S et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 674-677, issn 0015-3222Article

Schottky barrier characteristics at low temperaturesCHANDRA, M. M; PRASAD, M.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 715-719, issn 0031-8965Article

Schottky-barrier formation for abrupt metal-covalent semiconductor junctionsSANCHEZ-DEHESA, J; FLORES, F.Solid state communications. 1984, Vol 50, Num 1, pp 29-31, issn 0038-1098Article

On the barrier height of a metal-semiconductor contact with a thin interfacial layerCHATTOPADHYAY, P; DAW, A. N.Solid-state electronics. 1985, Vol 28, Num 8, pp 831-836, issn 0038-1101Article

Magneton sputtered gold contacts on n-GaAsBUONAQUISTI, A. D; MATSON, R. J; RUSSELL, P. E et al.Surface and interface analysis. 1984, Vol 6, Num 6, pp 279-281, issn 0142-2421Article

A further comment on «determining specific contact resistivity from contact end resistance measurements»FINETTI, M; SCORZONI, A; SONCINI, G et al.IEEE electron device letters. 1985, Vol 6, Num 4, pp 184-185, issn 0741-3106Article

Nickel and copper on cleaved indium phosphide: structure, metallurgy and electronic propertiesHUGHES, G. J; MCKINLEY, A; WILLIAMS, R. H et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 12, pp 2391-2405, issn 0022-3719Article

Radiation effects on the metal-GaP interfaceBORKOVSKAYA, O. Y; DMITRUK, N. L; KONAKOVA, R. V et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K129-K133, issn 0031-8965Article

Structure métal-semiconducteur à base de InAs pESINA, N. P; ZOTOVA, N. V; KARANDASHEV, S. A et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 6, pp 991-996, issn 0015-3222Article

Influence du chauffage par faisceau d'électrons sur les paramètres du contact métal-semi-conducteurKOLPAKOV, A. I; BONDAREVA, N. I.Fizika i himiâ obrabotki materialov. 1985, Num 4, pp 28-30, issn 0015-3214Article

Properties of the Al/Mo/Ti/PtSi/Si metallization systemCHEN ZHENGMING; XIU JIANLIANG; LUO JINSHENG et al.Chinese physics. 1988, Vol 8, Num 4, pp 1097-1101, issn 0273-429X, 5 p.Article

Rapid thermal annealing of Al-Si contactsPAI, C. S; CABREROS, E; LAU, S. S et al.Applied physics letters. 1985, Vol 46, Num 7, pp 652-654, issn 0003-6951Article

Influence de la résistance série sur la caractéristique capacité tension d'une structure à barrière de surfaceGOL'DBERG, YU. A; IVANOVA, O. V; L'VOVA, T. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 6, pp 1068-1072, issn 0015-3222Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Fast alloying technique for improved ohmic contacts to n-GaAsMOIZES, I.Solid-state electronics. 1984, Vol 27, Num 10, pp 925-926, issn 0038-1101Article

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Electronic structure of the Fe/Ge(110) interfacePICKETT, W. E; PAPACONSTANTOPOULOS, D. A.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8372-8378, issn 0163-1829Article

In-depth profiling of sputter-induced space-charge compensation in p-silicon Schottky barriersHELLINGS, G. J. A; STRAAYER, A; KIPPERMAN, A. H. M et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2067-2071, issn 0021-8979Article

Phase transitions in gold contacts to GaAsBEAM, E. III; CHUNG, D. D. L.Thin solid films. 1985, Vol 128, Num 3-4, pp 321-332, issn 0040-6090Article

Hafnium-n type silicon Schottky barriersRADZISZEWSKI, A; SKRABKA, T.Solid-state electronics. 1985, Vol 28, Num 7, pp 707-709, issn 0038-1101Article

Oxygen in titanium nitride diffusion barriersSINKE, W; FRIJLINK, G. P. A; SARIS, F. W et al.Applied physics letters. 1985, Vol 47, Num 5, pp 471-473, issn 0003-6951Article

Injection dans les structures métal. Couche mince p+-semiconducteur nBUZANEVA, E. V; LEVANDOVSKIJ, V. G; STRIKHA, V. I et al.Radiotehnika i èlektronika. 1985, Vol 30, Num 7, pp 1403-1408, issn 0033-8494Article

Ondes de magnétoplasma superficielles à la surface de séparation semiconducteur-métalZAKHAROV, V. A; SHTRAPENIN, G. L.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 802-807, issn 0015-3222Article